參數(shù)資料
型號(hào)： 934031450115
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 94K
代理商： 934031450115
1997 Sep 05
4
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF998WR
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S = 4 V; ID = 10 mA; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
350
K/W
Rth j-s
thermal resistance from junction to soldering point
note 2; Ts =90 °C
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S = 10 mA
6
20
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S = 10 mA
6
20
V
V(P)G1-S
gate 1-source cut-off voltage
VG2-S =4V; VDS =8V; ID =20 A
2.5
V
V(P)G2-S
gate 2-source cut-off voltage
VG1-S = 0; VDS =8V; ID =20 A
2V
IDSS
drain-source current
VG2-S =4V; VDS =8V; VG1-S =0
2
18
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =5V
50
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C22
25
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.1
2.5
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
pF
Cos
drain-source capacitance
f = 1 MHz
1.05
pF
Crs
reverse transfer capacitance f = 1 MHz
25
fF
F
noise gure
f = 200 MHz; GS = 2 mS; BS =BSopt
0.6
dB
f = 800 MHz; GS = 3.3 mS; BS =BSopt
1
dB
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