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參數(shù)資料
| 型號： | 934031480115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 934031480115 |
1995 Apr 25
8
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF904WR
Fig.15 Input admittance as a function of frequency;
typical values.
VDS = 5 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLD277
102
10
10 1
10 2
10
1
y is
(mS)
f (MHz)
b is
g is
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2 =4V.
ID =10 mA; Tamb =25 °C.
10 3
MLD278
102
10
10 3
10 2
10
1
y rs
10 3
10
1
2
rs
(
S)
f (MHz)
rs
yrs
(deg)
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
10 3
MLD279
102
10
1
10 2
10
1
10
2
y fs
(mS)
y fs
f (MHz)
fs
(deg)
Fig.18 Output admittance as a function of
frequency; typical values.
VDS = 5 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLD280
102
10
10 1
10
1
10 2
yos
(mS)
f (MHz)
bos
gos
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