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參數(shù)資料
| 型號(hào)： | 934031480115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 934031480115 |
1995 Apr 25
5
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF904WR
Fig.3
Forward transfer admittance as a function
of junction temperature; typical values.
50
0
50
150
30
0
MLD268
100
T ( C)
o
j
Yfs
(mS)
40
20
10
Fig.4
Typical gain reduction as a function of
AGC voltage.
f = 50 MHz.
Tj =25 °C.
handbook, halfpage
0
10
20
30
40
50
01234
V
(V)
AGC
gain
reduction
(dB)
MRA769
Fig.5
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.19.
VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb =25 °C; RG1 = 120 k.
handbook, halfpage
80
90
100
110
120
0
1020
304050
Vunw
(dB V)
gain reduction (dB)
MRA771
Fig.6 Transfer characteristics; typical values.
VDS =5V.
Tj =25 °C.
0
20
10
15
5
0
0.4
2.0
MLD270
0.8
1.2
1.6
I D
(mA)
V
(V)
G1 S
2 V
1.5 V
1 V
V
= 4 V
3 V
2.5 V
G2 S
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