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參數(shù)資料
| 型號： | 934031480115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 934031480115 |
1995 Apr 25
4
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF904WR
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
Note
1. RG connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VDS =5V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
350
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts =91 °C; note 2
210
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S =10mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S =10mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S =4V; VDS =5V; ID =20 A
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S =VDS =5V; ID =20 A
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG1 = 120 k;
note 1
813
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =5V
50
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj =25 °C
222530mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.2
2.6
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1
1.5
2
pF
Cos
drain-source capacitance
f = 1 MHz
1
1.3
1.6
pF
Crs
reverse transfer capacitance f = 1 MHz
25
35
fF
F
noise gure
f = 200 MHz; GS = 2 mS; BS =BSopt
1
1.5
dB
f = 800 MHz; GS =GSopt; BS =BSopt
2
2.8
dB
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