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參數(shù)資料
| 型號： | 934033430118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 94K |
| 代理商： | 934033430118 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN210
TrenchMOS
TM transistor
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction
Surface mounted, FR4 board, t
≤ 10 sec
-
62.5
K/W
to ambient
R
th j-a
Thermal resistance junction
Surface mounted, FR4 board
150
-
K/W
to ambient
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 3.4 A;
-
13
mJ
energy (per MOSFET)
t
p = 0.2 ms; Tj prior to avalanche = 25C;
V
DD ≤ 15 V; RGS = 50 ; VGS = 10 V
I
AS
Non-repetitive avalanche
-
3.4
A
current (per MOSFET)
ELECTRICAL CHARACTERISTICS
T
j= 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 10 A;
30
-
V
voltage
T
j = -55C
27
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
2
2.8
V
T
j = 150C
0.4
-
V
T
j = -55C
-
3.2
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 2.2 A
-
80
100
m
resistance
V
GS = 4.5 V; ID = 1 A
-
120
200
m
V
GS = 10 V; ID = 2.2 A; Tj = 150C
-
170
m
g
fs
Forward transconductance
V
DS = 20 V; ID = 2.2 A
2
4.5
-
S
I
D(ON)
On-state drain current
V
GS = 10 V; VDS = 1 V;
3.5
-
A
V
GS = 4.5 V; VDS = 5 V
2
-
A
I
DSS
Zero gate voltage drain
V
DS = 24 V; VGS = 0 V;
-
10
100
nA
current
V
DS = 24 V; VGS = 0 V; Tj = 150C
-
0.6
10
A
I
GSS
Gate source leakage current V
GS = ±20 V; VDS = 0 V
-
10
100
nA
Q
g(tot)
Total gate charge
I
D = 2.3 A; VDD = 15 V; VGS = 10 V
-
6
-
nC
Q
gs
Gate-source charge
-
0.7
-
nC
Q
gd
Gate-drain (Miller) charge
-
0.7
-
nC
t
d on
Turn-on delay time
V
DD = 20 V; RD = 18 ;-
6
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 6
-8
-
ns
t
d off
Turn-off delay time
Resistive load
-
21
-
ns
t
f
Turn-off fall time
-
15
-
ns
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
2.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
-
250
-
pF
C
oss
Output capacitance
-
88
-
pF
C
rss
Feedback capacitance
-
54
-
pF
January 2002
2
Rev 1.100
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