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參數(shù)資料
| 型號： | 934033430118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 934033430118 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN210
TrenchMOS
TM transistor
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS); parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID) ; parameter Tj
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
3.2 V
3.4 V
4 V
Tj = 25 C
VGS = 20 V
3.6 V
3.8 V
5V
10 V
4.2 V
0
1
2
3
4
5
6
01
2345
678
9
10
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
0
0.1
0.2
0.3
0.4
0.5
012
34567
89
10
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =5 V
4.2 V
20V
Tj = 25 C
3.8V
4 V
3.6 V
10V
3.2 V
3.4 V
-50
0
50
100
150
0
0.5
1
1.5
2
SOT223 30V Trench
Tj / C
a
Normalised RDS(ON) = f(Tj)
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
150 C
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
January 2002
4
Rev 1.100
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