參數(shù)資料
型號(hào): 934034320118
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 161K
代理商: 934034320118
1997 Jun 20
5
Philips Semiconductors
Product specication
Complementary enhancement
mode MOS transistors
PHC21025
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
35
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per channel
V(BR)DSS
drain-source breakdown voltage
N-channel
VGS = 0; ID =10 A30
V
P-channel
VGS = 0; ID = 10 A
30
V
VGSth
gate-source threshold voltage
N-channel
VGS =VDS; ID = 1 mA
1
2.8
V
P-channel
VGS =VDS; ID = 1mA
1
2.8
V
IDSS
drain-source leakage current
N-channel
VGS = 0; VDS =24V
100
nA
P-channel
VGS = 0; VDS = 24 V
100 nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
N-channel
±100 nA
P-channel
±100 nA
IDon
on-state drain current
N-channel
VGS =10V; VDS = 1 V
3.5
A
VGS = 4.5 V; VDS =5V
2
A
P-channel
VGS = 10 V; VDS = 1V
2.3
A
VGS = 4.5 V; VDS = 5V
1
A
RDSon
drain-source on-state resistance
N-channel
VGS = 4.5 V; ID =1A
0.11
0.2
VGS =10V; ID = 2.2 A
0.08
0.1
P-channel
VGS = 4.5 V; ID = 0.5 A
0.33
0.4
VGS = 10 V; ID = 1A
0.22
0.25
y
fs
forward transfer admittance
N-channel
VDS =20V; ID = 2.2 A
2
4.5
S
P-channel
VDS = 20 V; ID = 1A
1
2
S
Ciss
input capacitance
N-channel
VGS = 0; VDS = 20 V; f = 1 MHz
250
pF
P-channel
VGS = 0; VDS = 20 V; f = 1 MHz
250
pF
Coss
output capacitance
N-channel
VGS = 0; VDS = 20 V; f = 1 MHz
140
pF
P-channel
VGS = 0; VDS = 20 V; f = 1 MHz
140
pF
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