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參數(shù)資料
| 型號(hào)： | 934034320118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 13/16頁(yè) |
| 文件大小： | 161K |
| 代理商： | 934034320118 |
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1997 Jun 20
6
Philips Semiconductors
Product specication
Complementary enhancement
mode MOS transistors
PHC21025
Crss
reverse transfer capacitance
N-channel
VGS = 0; VDS = 20 V; f = 1 MHz
50
pF
P-channel
VGS = 0; VDS = 20 V; f = 1 MHz
50
pF
QG
total gate charge
N-channel
VGS =10V; VDS = 15 V; ID = 2.3 A
10
30
nC
P-channel
VGS = 10 V; VDS = 15 V; ID = 2.3 A
10
25
nC
QGS
gate-source charge
N-channel
VGS =10V; VDS = 15 V; ID = 2.3 A
1
nC
P-channel
VGS = 10 V; VDS = 15 V; ID = 2.3 A
1
nC
QGD
gate-drain charge
N-channel
VGS =10V; VDS = 15 V; ID = 2.3 A
2.5
nC
P-channel
VGS = 10 V; VDS = 15 V; ID = 2.3 A
3
nC
Switching times
ton
turn-on time
N-channel
VGS = 0to10V; VDD =20V;
ID = 1 A; RL =20
15
40
ns
P-channel
VGS =0to 10 V; VDD = 20 V;
ID = 1 A; RL =20
20
80
ns
toff
turn-off time
N-channel
VGS =10to0V; VDD =20V;
ID = 1 A; RL =20
25
140
ns
P-channel
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; RL =20
50
140
ns
Source-drain diode
VSD
source-drain diode forward
voltage
N-channel
VGD = 0; IS = 1.25 A
1.2
V
P-channel
VGD = 0; IS = 1.25 A
1.6
V
trr
reverse recovery time
N-channel
IS = 1.25 A; di/dt = 100 A/s
35
100
ns
P-channel
IS = 1.25 A; di/dt = 100 A/s
150
200
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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