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參數(shù)資料
| 型號： | 934034320118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 161K |
| 代理商： | 934034320118 |
1997 Jun 20
2
Philips Semiconductors
Product specication
Complementary enhancement
mode MOS transistors
PHC21025
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1s1
source 1
2g1
gate 1
3s2
source 2
4g2
gate 2
5d2
drain 2
6d2
drain 2
7d1
drain 1
8d1
drain 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
MAM118
1
4
5
8
d
1
d
2
d
2
d
2
g
2
s
1
g
1
s
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per channel
VDS
drain-source voltage (DC)
N-channel
30
V
P-channel
30
V
VSD
source-drain diode forward voltage
N-channel
IS = 1.25 A
1.2
V
P-channel
IS = 1.25 A
1.6
V
VGSO
gate-source voltage (DC)
open drain
±20
V
VGSth
gate-source threshold voltage
V
N-channel
VDS =VGS; ID = 1 mA
1
2.8
V
P-channel
VDS =VGS; ID = 1mA
1
2.8
V
ID
drain current (DC)
N-channel
3.5
A
P-channel
2.3
A
RDSon
drain-source on-state resistance
N-channel
VGS =10V; ID = 2.2 A
0.1
P-channel
VGS = 10 V; ID = 1A
0.25
Ptot
total power dissipation
Ts =80 °C
2W
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