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參數(shù)資料
| 型號： | 934036550215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 934036550215 |
1995 Apr 25
5
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF1100; BF1100R
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C
VDS = 9 V
24
28
33
mS
VDS = 12 V
24
28
33
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
VDS =9V
2.2
2.6
pF
VDS =12V
2.2
2.6
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
VDS =9V
1.6
pF
VDS =12V
1.4
pF
Cos
drain-source capacitance
f = 1 MHz
VDS =9V
1.4
1.8
pF
VDS =12V
1.1
1.5
pF
Crs
reverse transfer capacitance f = 1 MHz
VDS =9V
25
35
fF
VDS =12V
25
35
fF
F
noise gure
f = 800 MHz; GS =GSopt; BS =BSopt
VDS =9V
2
2.8
dB
VDS =12V
2
2.8
dB
Fig.5
Gain reduction as a function of the AGC
voltage; typical values.
f = 50 MHz.
Tj =25 °C.
handbook, halfpage
0
10
20
30
40
50
01234
V
(V)
AGC
gain
reduction
(dB)
MLD157
(1) RG = 250 k to VGG =12V
(2) RG = 180 k to VGG =9V
fw = 50 MHz; funw = 60 MHz; Tamb =25 °C.
Fig.6
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.27.
handbook, halfpage
80
90
100
110
120
0
(1)
(2)
10
20
30
40
50
Vunw
(dB
V)
gain reduction (dB)
MLD158
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