參數資料
型號: 934036550215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, 4 PIN
文件頁數: 4/14頁
文件大?。?/td> 159K
代理商: 934036550215
1995 Apr 25
12
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF1100; BF1100R
Table 1
Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID =10mA
Table 2
Noise data: VDS = 9 V; VG2-S = 4 V; ID =10mA
Table 3
Scattering parameters: VDS = 12 V; VG2-S = 4 V; ID =10mA
Table 4
Noise data: VDS = 12 V; VG2-S = 4 V; ID =10mA
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.986
3.6
2.528
174.4
0.001
63.7
1.000
2.0
100
0.983
7.4
2.531
169.8
0.001
80.7
1.000
4.2
200
0.974
14.7
2.490
159.5
0.002
81.0
0.996
8.1
300
0.960
21.8
2.446
149.8
0.002
80.3
0.994
11.9
400
0.953
28.7
2.412
139.8
0.003
76.3
0.992
15.7
500
0.933
35.4
2.341
130.1
0.003
76.5
0.987
19.4
600
0.915
42.0
2.283
120.4
0.004
79.0
0.984
23.0
700
0.895
47.9
2.205
111.6
0.003
81.5
0.981
26.7
800
0.880
53.5
2.146
102.9
0.003
90.8
0.978
30.3
900
0.864
59.6
2.087
93.4
0.003
106.6
0.974
33.9
1000
0.839
65.0
1.998
84.4
0.003
135.4
0.971
37.6
f
(MHz)
Fmin
(dB)
Γopt
rn
(ratio)
(deg)
800
2.00
0.67
43.9
0.89
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.986
3.7
2.478
174.7
0.001
72.2
1.000
1.6
100
0.984
7.4
2.480
170.3
0.001
80.9
1.000
3.5
200
0.974
14.6
2.440
160.6
0.002
82.7
0.997
6.6
300
0.960
21.8
2.400
151.4
0.002
79.9
0.996
9.7
400
0.953
28.7
2.371
141.9
0.003
77.7
0.994
12.8
500
0.933
35.3
2.306
132.7
0.003
77.1
0.991
15.8
600
0.915
41.9
2.255
123.6
0.004
77.1
0.989
18.7
700
0.894
47.8
2.183
115.3
0.004
79.3
0.986
21.7
800
0.879
53.5
2.131
107.2
0.003
83.9
0.984
24.6
900
0.863
59.5
2.080
98.2
0.003
95.1
0.982
27.5
1000
0.838
65.0
1.999
89.7
0.003
115.8
0.980
30.4
f
(MHz)
Fmin
(dB)
Γ
opt
rn
(ratio)
(deg)
800
2.00
0.66
43.3
0.97
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