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參數(shù)資料
| 型號(hào)： | 934036550215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 934036550215 |
1995 Apr 25
7
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF1100; BF1100R
Fig.11 Drain current as a function of gate 1 current;
typical values.
VDS = 9 to 12 V.
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
020
40
80
60
16
12
4
0
8
MLD163
I
(
A)
G1
I D
(mA)
Fig.12 Drain current as a function of gate 1 supply
voltage (= VGG) and drain supply voltage;
typical values; see Fig.27.
VG2-S =4V.
RG1 connected to VGG.
Tj =25 °C.
handbook, halfpage
0
20
15
10
5
0
48
16
MLD164
12
V
= V
(V)
GG
DS
I D
(mA)
R
= 100 k
G1
147 k
180 k
205 k
249 k
301 k
402 k
511 k
Fig.13 Drain current as a function of gate 1 voltage
(= VGG); typical values; see Fig.27.
VDS = 9 V; VG2-S =4V.
RG1 = 180 k (connected to VGG); Tj =25 °C.
handbook, halfpage
02
4
10
8
6
12
4
0
8
MLD165
V
(V)
GG
I D
(mA)
VDS = 12 V; VG2-S =4V.
RG1 = 250 k (connected to VGG); Tj =25 °C.
Fig.14 Drain current as a function of gate 1 voltage;
(= VGG); typical values; see Fig.27.
handbook, halfpage
04
8
12
4
0
8
MLD166
V
(V)
GG
I D
(mA)
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