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Philips Semiconductors
Product specification
Thyristors
BT152B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated thyristors in a plastic
SYMBOL
PARAMETER
MAX.
MAX. UNIT
envelope
suitable
for
surface
mounting,
intended
for
use
in
BT152B-
400R
600R
800R
applications
requiring
high
V
DRM,
Repetitive peak off-state
450
650
800
V
bidirectional
blocking
voltage
V
RRM
voltages
capability and high thermal cycling
I
T(AV)
Average on-state current
13
A
performance.
Typical
applications
I
T(RMS)
RMS on-state current
20
A
include motor control, industrial and
I
TSM
Non-repetitive peak on-state
200
A
domestic lighting, heating and static
current
switching.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
mb
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -600R -800R
V
DRM
Repetitive peak off-state
-
450
1
650
1
800
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
mb ≤ 103 C
-
13
A
I
T(RMS)
RMS on-state current
all conduction angles
-
20
A
I
TSM
Non-repetitive peak
half sine wave; T
j = 25 C prior to
on-state current
surge
t = 10 ms
-
200
A
t = 8.3 ms
-
220
A
I
2tI2t for fusing
t = 10 ms
-
200
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 50 A; IG = 0.2 A;
-
200
A/
s
on-state current after
dI
G/dt = 0.2 A/s
triggering
I
GM
Peak gate current
-
5
A
V
GM
Peak gate voltage
-
5
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
20
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
13
mb
2
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
September 1997
1
Rev 1.100