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參數(shù)資料
| 型號(hào)： | 934048270118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | 20 A, 800 V, SCR |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 48K |
| 代理商： | 934048270118 |
Philips Semiconductors
Product specification
Thyristors
BT152B series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
1.1
K/W
junction to mounting base
R
th j-a
Thermal resistance
minimum footprint, FR4 board
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
-
3
32
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
-
25
80
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
15
60
mA
V
T
On-state voltage
I
T = 40 A
-
1.4
1.75
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.6
1.5
V
D = VDRM(max); IT = 0.1 A; Tj = 125 C
0.25
0.4
-
V
I
D, IR
Off-state leakage current
V
D = VDRM(max); VR = VRRM(max); Tj = 125 C
-
0.2
1.0
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
200
300
-
V/
s
off-state voltage
exponential waveform gate open circuit
t
gt
Gate controlled turn-on
V
D = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s;
-
2
-
s
time
I
TM = 40 A
t
q
Circuit commutated
V
D = 67% VDRM(max); Tj = 125 C;
-
70
-
s
turn-off time
I
TM = 50 A; VR = 25 V; dITM/dt = 30 A/s;
dV
D/dt = 50 V/s; RGK = 100
September 1997
2
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93405 | 制造商:Harris Corporation 功能描述: |
| 93405-0004 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:REVERSE FOOTPRINT PICOFLEX SMT HEADER |
| 93405-0006 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:REVERSE FOOTPRINT PICOFLEX SMT HEADER |
| 93405-0008 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:REVERSE FOOTPRINT PICOFLEX SMT HEADER |
| 93405-0010 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:REVERSE FOOTPRINT PICOFLEX SMT HEADER |
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