參數(shù)資料
型號: 934049750127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TOP-3D, FULL PACK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 62K
代理商: 934049750127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
mA
T
j = 125 C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
-
110
-
mA
B
VEBO
Emitter-base breakdown voltage
I
B = 1 mA
7.5
13.5
-
V
R
EB
Base-emitter resistance
V
EB = 7.5 V
70
V
CEsat
Collector-emitter saturation voltage
I
C = 7.0 A; IB = 1.75 A
-
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 7.0 A; IB = 1.75 A
0.78
0.86
0.95
V
F
Diode forward voltage
I
F = 7 A
1.4
2.2
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
-
19
-
h
FE
I
C = 7 A; VCE = 1 V
3.8
5.8
7.8
DYNAMIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16 kHz line
I
Csat = 7.0 A; LC = 650 H; Cfb = 18 nF;
deflection circuit)
V
CC = 162 V; IB(end) = 1.5 A; LB = 2 H;
-V
BB = 4 V
t
s
Turn-off storage time
5.8
6.5
s
t
f
Turn-off fall time
0.6
0.8
s
2 Measured with half sine-wave voltage (curve tracer).
August 2002
2
Rev 2.000
相關(guān)PDF資料
PDF描述
934049930115 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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