參數(shù)資料
型號: 934049750127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TOP-3D, FULL PACK-3
文件頁數(shù): 4/7頁
文件大?。?/td> 62K
代理商: 934049750127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
Fig.5. DC current gain. h
FE = f (IC)
Parameter T
hs
(Low and high gain)
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.8. Limit storage and fall time.
t
s = f (IB); tf = f (IB); Ths = 85C; f = 16 kHz
0.01
0.1
1
10
100
1
10
100
hFE
IC (A)
VCE = 1 V
Ths = 25 °C
Ths = 85 °C
01
23
4
0.6
0.7
0.8
0.9
1
VBEsat (V)
IB (A)
IC = 6 A
4 A
Ths = 85 °C
Ths = 25 °C
0.1
1
10
100
0.01
0.1
1
10
VCEsat (V)
Ths = 85 °C
Ths = 25 °C
IC/IB = 12
IC/IB = 5
IC (A)
0123
4
0
1
2
3
4
5
6
7
8
9
10
IB / A
ts/tf/ us
BU2527AFX,DFX
August 2002
4
Rev 2.000
相關PDF資料
PDF描述
934049930115 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
934049940115 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
934049950125 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
934049950165 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
934049950115 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
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