參數(shù)資料
型號: 934049750127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TOP-3D, FULL PACK-3
文件頁數(shù): 5/7頁
文件大小: 62K
代理商: 934049750127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
Fig.9. Normalised power dissipation.
PD% = 100
PD/PD 25C = f (T
hs)
Fig.10. Transient thermal impedance.
Z
th j-hs = f(t); parameter D = tp/T
Fig.11. Test Circuit RBSOA.
V
CC = 150 V; -VBB = 1 - 4 V;
L
C = 1 mH; VCL = 1500 V; LB = 0.5 - 2 H;
C
FB = 1 - 3 nF; IB(end) = 0.8 - 4 A
Fig.12. Reverse bias safe operating area. T
j ≤ Tjmax
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
LB
IB1
-VBB
LC
T.U.T.
VCC
VCL
CFB
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
tp
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
100
1000
1700
0
5
10
15
20
25
30
35
VCE / V
IC / A
BU2727A/AF/D/DF
Area where
fails occur
August 2002
5
Rev 2.000
相關(guān)PDF資料
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934049930115 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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