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參數(shù)資料
| 型號(hào)： | 934051830115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 934051830115 |
1998 Jul 31
2
Philips Semiconductors
Product specication
NPN resistor-equipped transistor
PDTC124EE
FEATURES
Built-in bias resistors R1 and R2
(typ. 22 k
each)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-75; SOT416 plastic package.
PNP complement: PDTA124EE.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground
3
collector/output
Fig.1
Simplified outline (SC-75; SOT416) and symbol.
handbook, halfpage
MAM346
1
2
3
Top view
12
3
R1
R2
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
TYPE
NUMBER
MARKING
CODE
PDTC124EE
06
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
50
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
150
mW
hFE
DC current gain
IC = 5 mA; VCE =5V
60
R1
input resistor
15.4
22
28.6
k
resistor ratio
0.8
1
1.2
R2
R1
-------
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