參數(shù)資料
型號: 934052160127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/13頁
文件大?。?/td> 142K
代理商: 934052160127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP55N03LT, PHB55N03LT
Logic level FET
PHD55N03LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
V
DSS = 25 V
Very low on-state resistance
Fast switching
I
D = 55 A
Low thermal resistance
Logic level compatible
R
DS(ON) ≤ 14 m (VGS = 10 V)
R
DS(ON) ≤ 18 m (VGS = 5 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
High frequency computer motherboard d.c. to d.c. converters
High current switching
The PHP55N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB55N03LT is supplied in the SOT404 (D
2PAK) surface mounting package.
The PHD55N03LT is supplied in the SOT428 (DPAK)surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
SOT428 (DPAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
25
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-25
V
GS
Gate-source voltage (DC)
-
± 15
V
GSM
Gate-source voltage (pulse
T
j ≤ 150C
-
± 20
V
peak value)
I
D
Drain current (DC)
T
mb =
25 C
-
55
A
T
mb = 100 C
-
38
A
I
DM
Drain current (pulse peak
T
mb = 25 C
-
220
A
value)
P
tot
Total power dissipation
T
mb = 25 C
-
103
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
12 3
tab
13
tab
2
1
2
3
tab
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
October 1999
1
Rev 1.200
相關PDF資料
PDF描述
05F8532 IC-PRECISION OP AMP
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