參數(shù)資料
型號： 934055224118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 9.6 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 2/9頁
文件大小： 123K
代理商： 934055224118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHN1018
Logic level FET
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
25
-
V
voltage
T
j = -55C
22
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2
V
T
j = 150C
0.6
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 10 A
-
13
18
m
resistance
V
GS = 5 V; ID = 10 A
-
18
21
m
V
GS = 5 V; ID = 10 A; Tj = 150C
-
36
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 10 A
8
25
-
S
I
GSS
Gate source leakage current V
GS = ±5 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 25 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 150C
-
500
A
Q
g(tot)
Total gate charge
I
D = 10 A; VDD = 15 V; VGS = 5 V
-
17
-
nC
Q
gs
Gate-source charge
-
4
-
nC
Q
gd
Gate-drain (Miller) charge
-
6
-
nC
t
d on
Turn-on delay time
V
DD = 15 V; ID = 25 A;
-
6.4
12
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5
-62
75
ns
t
d off
Turn-off delay time
Resistive load
-
50
75
ns
t
f
Turn-off fall time
-
30
45
ns
L
d
Internal drain inductance
Drain leads to centre of die
-
1
-
nH
L
s
Internal source inductance
Source leads to source bond pad
-
3
-
nH
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
-
1050
-
pF
C
oss
Output capacitance
-
330
-
pF
C
rss
Feedback capacitance
-
220
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous source current
T
a = 25 C, tp ≤ 10 s
-
9.6
A
(body diode)
I
DRM
Pulsed source current (body
-
38
A
diode)
V
SD
Diode forward voltage
I
F = 10 A; VGS = 0 V
-
0.83
1.2
V
t
rr
Reverse recovery time
I
F = 10 A; -dIF/dt = 100 A/s;
-
100
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 25 V
-
0.13
-
C
October 1999
2
Rev 1.200
相關PDF資料
PDF描述
934055225118 10 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
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934055227135 1520 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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