參數(shù)資料
型號(hào): 934055224118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 9.6 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁數(shù): 5/9頁
文件大?。?/td> 123K
代理商: 934055224118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHN1018
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
40
45
50
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 10A
Tj = 25 C
VDD = 15 V
0
5
10
15
20
25
30
35
40
45
50
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
October 1999
5
Rev 1.200
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