參數(shù)資料
型號(hào): 934055451118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁數(shù): 5/7頁
文件大?。?/td> 88K
代理商: 934055451118
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN210T
TrenchMOS
TM transistor
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tp);
unclamped inductive load
012345
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
min
max
0
1
2
3
4
5
6
7
8
9
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
10
100
1000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
PHN210
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche =125 C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
012
34567
89
10
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 2.3A
Tj = 25 C
VDD = 15 V
March 1999
5
Rev 1.000
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