參數(shù)資料
型號(hào): 934055500118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 1/15頁(yè)
文件大小: 324K
代理商: 934055500118
PHB160N03T
N-channel enhancement mode eld-effect transistor
Rev. 01 — 13 September 2000
Product specication
c
M3D166
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PHB160N03T in SOT404 (D2-PAK).
2.
Features
s TrenchMOS technology
s Very low on-state resistance.
3.
Applications
s DC to DC converters
s Switched-mode power supplies
s General purpose switch.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT404 (D2-PAK), simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT404 (D2-PAK)
2
drain (d)
3
source (s)
mb
connected to drain (d)
13
2
MBK116
mb
s
d
g
MBB076
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