參數(shù)資料
型號(hào)： 934055453127
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 6 A, 525 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, FULL PACK-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 58K
代理商： 934055453127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
AVALANCHE ENERGY CAPABILITY
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CC = 150V; VBB = -5V; LC =
15mH;L
B = 1H
EAS
Avalanche Energy Capability
1
T
hs ≤ 110 C
-
1.0
mJ
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
3.95
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
STATIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
0.2
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
0.5
mA
T
j = 125 C
I
CEO
Collector cut-off current
2
V
CEO = VCEOMmax(550V)
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
1.0
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
525
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 2.0 A;IB = 0.4 A
-
0.14
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 2.0 A;IB = 0.4 A
-
0.89
1.5
V
h
FE
DC current gain
I
C = 1 mA; VCE = 5 V
19
28
-
h
FE
I
C = 500 mA;VCE = 5 V
30
45
65
h
FEsat
DC current gain
I
C = 2.0 A; VCE = 5 V
17
21
25
DYNAMIC CHARACTERISTICS
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 2.5 A; IBon = -IBoff = 0.5 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.6
0.95
s
t
s
Turn-off storage time
4.5
6.4
s
t
f
Turn-off fall time
0.4
0.59
s
Switching times (inductive load)
I
Con = 2.5 A; IBon = 0.5 A; LB = 1 H;
-V
BB = 5 V
t
si
Turn-off storage time
1.67
2.3
s
t
fi
Turn-off fall time
140
203
ns
Switching times (inductive load)
I
Con = 2.5 A; IBon = 0.5 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
si
Turn-off storage time
1.9
2.7
s
t
fi
Turn-off fall time
144
216
ns
1 Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche.
2 Measured with half sine-wave voltage (curve tracer).
November 1999
2
Rev 1.100
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