參數(shù)資料
型號(hào)： 934055637118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁(yè)數(shù)： 11/14頁(yè)
文件大?。?/td> 135K
代理商： 934055637118
October 1999
6
Rev 1.200
Philips Semiconductors
Product specication
PSMN005-55B;
PSMN005-55P
N-channel logic level TrenchMOS(TM) transistor
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
ID/A
VGS/V
Tj =
175
25
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
204060
80
100
0
50
100
150
gfs/S
ID/A
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction temperature, Tj (C)
100
1000
10000
100000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
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