參數(shù)資料
型號： 934055637118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁數(shù)： 8/14頁
文件大?。?/td> 135K
代理商： 934055637118
October 1999
3
Rev 1.200
Philips Semiconductors
Product specication
PSMN005-55B;
PSMN005-55P
N-channel logic level TrenchMOS(TM) transistor
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
0.65
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
50
-
K/W
footprint
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 75 A;
-
268
mJ
energy
t
p = 100 s; Tj prior to avalanche = 25C;
V
DD ≤ 15 V; RGS = 50 ; VGS = 5 V
I
AS
Non-repetitive avalanche
-
75
A
current
ELECTRICAL CHARACTERISTICS
T
j= 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
4.8
5.8
m
resistance
V
GS = 5 V; ID = 25 A
-
5.3
6.3
m
V
GS = 4.5 V; ID = 25 A
-
6.7
m
V
GS = 5 V; ID = 25 A; Tj = 175C
-
13.2
m
I
GSS
Gate source leakage current V
GS = ± 10 V; VDS = 0 V
-
2
100
nA
I
DSS
Zero gate voltage drain
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 75 A; VDD = 44 V; VGS = 5 V
-
103
-
nC
Q
gs
Gate-source charge
-
15
-
nC
Q
gd
Gate-drain (Miller) charge
-
52
-
nC
t
d on
Turn-on delay time
V
DD = 30 V; RD = 1.2 ;
-
45
-
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
180
-
ns
t
d off
Turn-off delay time
Resistive load
-
420
-
ns
t
f
Turn-off fall time
-
235
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
6500
-
pF
C
oss
Output capacitance
-
1500
-
pF
C
rss
Feedback capacitance
-
700
-
pF
相關(guān)PDF資料
PDF描述
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