參數(shù)資料
型號(hào): 934055637118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 135K
代理商: 934055637118
October 1999
2
Rev 1.200
Philips Semiconductors
Product specication
PSMN005-55B;
PSMN005-55P
N-channel logic level TrenchMOS(TM) transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
V
DSS = 55 V
Very low on-state resistance
Fast switching
I
D = 75 A
Low thermal resistance
R
DS(ON) ≤ 5.8 m (VGS = 10 V)
R
DS(ON) ≤ 6.3 m (VGS = 5 V)
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PSMN005-55P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN005-55B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
55
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-55
V
GS
Continuous gate-source
-
± 15
V
voltage
V
GSM
Peak pulsed gate-source
T
j ≤ 150 C
-
± 20
V
voltage
I
D
Continuous drain current
T
mb = 25 C; VGS = 5 V
-
75
2
A
T
mb = 100 C; VGS = 5 V
-
75
2
A
I
DM
Pulsed drain current
T
mb = 25 C
-
240
A
P
D
Total power dissipation
T
mb = 25 C
-
230
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
13
tab
2
12 3
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
2 maximum current limited by package
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