- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24699 > 934055678114 (NXP SEMICONDUCTORS) S BAND, Si, NPN, RF POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 934055678114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 934055678114 |
1999 Aug 16
3
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-65
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance at Th =25 °C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCES
collector-emitter voltage
RBE =0
75
V
VEBO
emitter-base voltage
open collector
2V
ICM
peak collector current
tp ≤ 100 s; δ≤ 10%
8A
Ptot
total power dissipation
tp = 100 s; δ = 10%; Tmb =25 °C
200
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
up to 0.2 mm from ceramic cap;
t
≤ 10 s
235
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction to heatsink
tp = 100 s; δ = 10%; note 1
0.57
K/W
tp = 300 s; δ = 10%; note 1
0.74
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 20 mA; open emitter
75
V
V(BR)CES
collector-emitter breakdown voltage IC = 20 mA; VBE =0
75
V
ICBO
collector leakage current
VCB =40V; IE =0
2mA
ICES
collector leakage current
VCE =40V; VBE =0
4mA
IEBO
emitter leakage current
VEB = 1.5 V; IC =0
0.4
mA
hFE
DC current gain
VCB =5V; IC =2A
40
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 s; δ = 10%
3.1 to 3.5
40
≥65
≥7
≥35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 05WS11 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-11 |
| 934055680115 | 100 mA, 65 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934055685127 | 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934055766118 | 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934055768118 | 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。