參數資料
型號: 934055678114
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁數: 8/12頁
文件大?。?/td> 68K
代理商: 934055678114
1999 Aug 16
5
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-65
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
Fig.5
Power gain as a function of frequency;
typical values.
handbook, halfpage
3.1
Gp
(dB)
3.2
f (GHz)
3.3
3.5
10
0
8
3.4
6
4
2
MCD753
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
Fig.6
Return losses input as a function of
frequency; typical values.
handbook, halfpage
3.1
Return
Losses
(dB)
3.2
3.3
3.5
30
0
10
20
3.4
f (GHz)
MCD754
Fig.7
Input impedance as a function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =65W.
handbook, halfpage
3.1
Zi
(
)
3.2
f (GHz)
xi
ri
3.3
3.5
25
0
20
3.4
15
10
5
MCD755
Fig.8
Load impedance as a function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =65W.
handbook, halfpage
3.1
3.2
3.3
3.5
8
4
8
0
3.4
XL
RL
MCD756
f (MHz)
ZL
(
)
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