參數(shù)資料
型號: 934055678114
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁數(shù): 9/12頁
文件大小: 68K
代理商: 934055678114
1999 Aug 16
6
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-65
handbook, full pagewidth
MCD757
30
40
output
input
Fig.9
Component layout for 3.1 to 3.5 GHz class-C test circuit.
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (
εr = 2.2); thickness = 0.38 mm.
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