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參數(shù)資料
| 型號(hào)： | 934055680115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 65 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 934055680115 |
1999 Aug 24
2
Philips Semiconductors
Product specication
PNP general purpose double transistor
BC856S
FEATURES
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors.
APPLICATIONS
General purpose switching and small signal
amplification.
DESCRIPTION
PNP double transistor in an SC-88 (SOT363) plastic six
lead package.
PINNING
MARKING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
TYPE NUMBER
MARKING CODE
BC856S
5Ft
handbook, halfpage
13
2
4
5
6
Top view
MAM339
13
2
TR1
TR2
6
4
5
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
80
V
VCEO
collector-emitter voltage
open base
65
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
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