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參數(shù)資料
| 型號(hào)： | 934055680115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 65 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934055680115 |
1999 Aug 24
4
Philips Semiconductors
Product specication
PNP general purpose double transistor
BC856S
handbook, halfpage
104
103
102
10
MCD763
101
1
VCEsat
(mV)
IC (mA)
10
102
103
(1)
(3) (2)
Fig.2
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MCD764
102
101
VBE
(mV)
1
IC (mA)
(3)
10
102
103
(2)
(1)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
Fig.4 DC current gain as a function of collector current; typical values.
handbook, full pagewidth
0
500
100
200
300
400
MCD765
102
101
hFE
IC (mA)
110
102
103
(3)
(2)
(1)
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
VCE =5V.
(1) Tamb = 150 °C.
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