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參數(shù)資料
| 型號： | 934055680115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 65 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-88, 6 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934055680115 |
1999 Aug 24
3
Philips Semiconductors
Product specication
PNP general purpose double transistor
BC856S
THERMAL CHARACTERISTICS
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector cut-off current
IE = 0; VCB = 30 V
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V
110
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
100
mV
IC = 100 mA; IB = 5 mA; note 1
300
mV
VBEsat
base-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
700
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5V;
f = 100 MHz
100
MHz
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