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參數(shù)資料
| 型號(hào)： | 934055760118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | 934055760118 |
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Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 12 March 2001
7 of 14
9397 750 08037
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 175 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
2.5
-60
-20
20
1
0.5
0
1.5
2
60
100
140
180
3.5
V
GS(th)
(V)
T
j
(
o
C)
3
4
4.5
max
typ
min
003aaa023
003aaa024
1
2
3
4
5
max
typ
min
I
D
V
GS
(V)
10-7
10-6
10-5
10-4
10-3
10-2
(A)
40
30
20
10
5
0
15
25
35
gfs
(S)
Tj = 25
oC
Tj = 175
oC
0
5
1015
2025
30
ID (A)
003aaa063
104
103
102
10
110
102
10-1
Ciss, Coss,
Crss
(pF)
VDS (V)
Ciss
Crss
Coss
003aaa065
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