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參數(shù)資料
| 型號： | 934055760118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 277K |
| 代理商： | 934055760118 |
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 12 March 2001
8 of 14
9397 750 08037
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C and 175 °C; VGS =0V
ID = 30 A; VDD = 30 V and 120 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
30
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
1.2
IS
(A)
Tj = 175
o
C
Tj = 25
o
C
VSD (V)
003aaa067
VDD = 30 V
VDD = 120 V
0
2
4
6
8
10
12
14
VGS
(V)
0
10
2030
4050
60
QG (nC)
003aaa066
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