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參數(shù)資料
| 型號(hào)： | 934055760118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | 934055760118 |
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Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 12 March 2001
2 of 14
9397 750 08037
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
150
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
29
A
Ptot
total power dissipation
Tmb =25 °C
150
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =10V; ID =15A
63
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
150
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
150
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
29
A
Tmb = 100 °C; VGS =10V;
20
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
116
A
Ptot
total power dissipation
150
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC) Tmb =25 °C
29
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
116
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
IAS = 26 A; tp = 0.2 ms;
VDD ≤ 25 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C;
502
mJ
IAS
non-repetitive avalanche current
29
A
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