參數(shù)資料
型號： 934055773127
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, FPAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 62K
代理商： 934055773127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 14 A;
-
70
mJ
energy
t
p = 38 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 10 V; refer
to fig 15
I
AS
Peak non-repetitive
-
14
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction
-
4.17
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT186A package, in free air
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
200
-
V
voltage
T
j = -55C
178
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 150C
1
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 7 A
-
150
230
m
resistance
V
GS = 10 V; ID = 7 A; Tj = 150C
-
540
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 7 A
6
12.1
-
S
I
GSS
Gate source leakage current V
GS = ± 10 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 200 V; VGS = 0 V
-
0.05
10
A
current
T
j = 150C
-
500
A
Q
g(tot)
Total gate charge
I
D = 14 A; VDD = 160 V; VGS = 10 V
-
38
-
nC
Q
gs
Gate-source charge
-
4
-
nC
Q
gd
Gate-drain (Miller) charge
-
13.3
-
nC
t
d on
Turn-on delay time
V
DD = 100 V; RD = 10 ;
-
25
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-40
-
ns
t
d off
Turn-off delay time
Resistive load
-
83
-
ns
t
f
Turn-off fall time
-
31
-
ns
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1500
-
pF
C
oss
Output capacitance
-
128
-
pF
C
rss
Feedback capacitance
-
60
-
pF
November 2000
2
Rev 1.100
相關(guān)PDF資料
PDF描述
934055774127 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934055780127 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
934055781127 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
05WS20 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934055782127 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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