參數(shù)資料
型號(hào): 934055773127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, FPAK-3
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 62K
代理商: 934055773127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 7 A; VGS = 10 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
0
4
8
12
16
20
24
28
024
68
10
Gate-source voltage, VGS (V)
Drain current, ID (A)
Tj = 25 C
150 C
VGS(TO) / V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-100
-50
0
50
100
150
Tj / C
max
typ
min
0
5
10
15
20
0
4
8
12
16
20
24
28
ID / (A)
Transconductance, gfs (S)
01
23
45
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
Rds(on) normalised to 25 deg C
0.5
1
1.5
2
2.5
-70
-20
30
80
130
Ths / deg C
a
10
100
1000
10000
0
10203040
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
November 2000
5
Rev 1.100
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