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參數(shù)資料
| 型號： | 934056117135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 292K |
| 代理商： | 934056117135 |
Philips Semiconductors
PHT4NQ10T
TrenchMOS standard level FET
Product data
Rev. 02 — 2 May 2002
2 of 12
9397 750 09581
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 150 °C
-
100
V
ID
drain current (DC)
Tsp =25 °C; VGS =10V
-
3.5
A
Ptot
total power dissipation
Tsp =25 °C
-
6.9
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 1.75 A
Tj =25 °C
200
250
m
Tj = 150 °C
-
575
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 150 °C
-
100
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 150 °C; RGS =20k
-
100
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tsp =25 °C; VGS =10V;
-
3.5
A
-
2.2
A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s;
-14
A
Ptot
total power dissipation
-
6.9
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
-
3.5
A
ISM
peak source (diode forward) current
Tsp =25 °C; pulsed; tp ≤ 10 s
-
14
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID = 3.5 A;
tp = 0.2 ms; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C;
-45
mJ
IDS(AL)SM peak non-repetitive drain-source
avalanche current
-
3.5
A
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