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參數(shù)資料
| 型號： | 934056117135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 292K |
| 代理商： | 934056117135 |
Philips Semiconductors
PHT4NQ10T
TrenchMOS standard level FET
Product data
Rev. 02 — 2 May 2002
5 of 12
9397 750 09581
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS =0V
Tj =25 °C
100
130
-
V
Tj = 55 °C89
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS
234V
1.2
-
V
--6
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C-
1
25
A
Tj = 150 °C
-
4
250
A
VDS = 60 V; VGS =0V
Tj =85 °C-
-
1
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID = 1.75 A
-
200
250
m
-
575
m
Dynamic characteristics
gfs
forward transconductance
VDS =5V; ID = 3.5 A;
-
4.2
S
Qg(tot)
total gate charge
ID = 3.5 A; VDS =80V;
-
7.4
-
nC
Qgs
gate-source charge
-
1.5
-
nC
Qgd
gate-drain (Miller) charge
-
3.3
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 13
-
300
-
pF
Coss
output capacitance
-
44
-
pF
Crss
reverse transfer capacitance
-
21
-
pF
td(on)
turn-on delay time
VDD = 50 V; RD =15 ;
VGS =10V; RG =6
-8
-ns
tr
rise time
-
13
-
ns
td(off)
turn-off delay time
-
20
-
ns
tf
fall time
-
11
-
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 3.5 A; VGS =0V;
-
0.87
1.5
V
trr
reverse recovery time
IS = 3.5 A;
dIS/dt = 100 A/s;
VGS =0V; VDS =30V
-50
-
ns
Qr
recovered charge
-
100
-
nC
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