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參數(shù)資料
| 型號(hào)： | 934056117135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 292K |
| 代理商： | 934056117135 |
Philips Semiconductors
PHT4NQ10T
TrenchMOS standard level FET
Product data
Rev. 02 — 2 May 2002
3 of 12
9397 750 09581
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Unclamped inductive load; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C and 125 °C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa17
0
40
80
Pder
120
0
50
100
150
200
Tsp (°C)
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03aa88
10-2
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
tp = 10 s
100
s
Limit RDSon = VDS/ID
03aa97
10-1
1
10
10-2
10-1
1
10
tp (ms)
IAS
(A)
Tj prior to avalanche = 125 °C
25
°C
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