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參數(shù)資料
| 型號： | 934056118127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 934056118127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9575-100A
Logic level FET
BUK9675-100A
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
100
-
V
voltage
T
j = -55C
89
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 100 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 10 A
-
60
75
m
resistance
T
j = 175C
-
188
m
V
GS = 10 V; ID = 10 A
-
55
72
m
V
GS = 4.5 V; ID = 10 A
-
61
84
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1278
1704
pF
C
oss
Output capacitance
-
129
155
pF
C
rss
Feedback capacitance
-
88
120
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2;
-
13
20
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
120
168
ns
t
d off
Turn-off delay time
-
58
87
ns
t
f
Turn-off fall time
-
57
86
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die(SOT404)
L
s
Internal source inductance
Measured from source lead to
-
7.5
-
nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
23
A
current
I
DRM
Pulsed reverse drain current
-
92
A
V
SD
Diode forward voltage
I
F = 10 A; VGS = 0 V
-
0.85
1.2
V
I
F = 23 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 23 A; -dIF/dt = 100 A/s;
-
63
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.22
-
C
October 2000
2
Rev 1.200
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