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參數(shù)資料
| 型號： | 934056118127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 934056118127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9575-100A
Logic level FET
BUK9675-100A
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.8. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.9. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
0
10
20
30
40
50
60
02
46
8
10
VDS/V
ID/A
2.8
3.0
5.0
10.0
VGS/V =
3.2
2.2
3.6
3.8
2.4
2.6
4.0
3.4
50
55
60
65
70
75
3456789
10
VGS/V
RDS(ON)
Ohm
40
50
60
70
80
90
100
110
120
130
140
10
15
20
25
30
35
40
ID/A
RDS(ON)/mOhm
4.2
4.6
4.8
4.0
4.4
5.0
0
5
10
15
20
25
0.0
1.0
2.0
3.0
4.0
VGS/V
ID/A
Tj/C= 175
25
50
55
60
65
70
75
3456789
10
VGS/V
RDS(ON)
Ohm
0
10
20
30
40
0
1020
30405060
ID/A
gfs/S
October 2000
4
Rev 1.200
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