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參數(shù)資料
| 型號(hào)： | 934056118127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | 934056118127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9575-100A
Logic level FET
BUK9675-100A
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
Fig.12. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.13. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.14. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.15. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 25 A; parameter VDS
Fig.16. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0.5
1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
Tmb / degC
a
Rds(on) normalised to 25degC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
0.1
1
10
100
VDS/V
C
a
pa
c
it
a
nc
e
/
nF
Ciss
Coss
Crss
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
1
2
3
4
5
0
5
10
15
20
25
QG / nC
VGS / V
VDS = 14V
VDS = 44V
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
10
20
30
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSDS/V
IF/A
25
Tj/C= 150
October 2000
5
Rev 1.200
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