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參數(shù)資料
| 型號(hào)： | 934056289115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934056289115 |
2000 Aug 08
4
Philips Semiconductors
Product specication
PNP resistor-equipped double transistor
PUMB11
THERMAL CHARACTERISTICS
Note
1. Refer to SC-88 standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector cut-off current
IE = 0; VCB = 50 V
100 nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
1
A
IB = 0; VCE = 30 V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
400 A
hFE
DC current gain
IC = 5 mA; VCE = 5V
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150 mV
Vi(off)
input-off voltage
IC = 100 A; VCE = 5V
1.1
0.8
V
Vi(on)
input-on voltage
IC = 10 mA; VCE = 0.3 V
3
1.6
V
R1
input resistor
7
10
13
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3pF
R2
R1
-------
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