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參數(shù)資料
| 型號： | 934056289115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934056289115 |
2000 Aug 08
5
Philips Semiconductors
Product specication
PNP resistor-equipped double transistor
PUMB11
handbook, halfpage
103
102
10
1
MLD412
101
1
10
IC (mA)
hFE
102
(2)
(1)
(3)
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
1
101
102
MLD411
1
10
VCEsat
(V)
IC (mA)
102
(3) (2)
(1)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
10
1
101
MLD414
102
101
1
IC (mA)
Vi(off)
(V)
10
(2)
(3)
(1)
Fig.5
Input-off voltage as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
102
101
10
1
MLD413
101
1
10
IC (mA)
Vi(on)
(V)
102
(2)
(3)
(1)
Fig.6
Input-on voltage as a function of collector
current; typical values.
VCE = 0.3 V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
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