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參數(shù)資料
| 型號(hào)： | 934056381118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 244K |
| 代理商： | 934056381118 |
Philips Semiconductors
Si4420DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 28 May 2001
5 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
1
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
1
A
Tj =55 °C
5
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
ID(on)
on-state drain current
VDS ≥ 5 V; VGS =10V
30
A
RDSon
drain-source on-state resistance
7.3
9
m
10.9
13
m
Dynamic characteristics
gfs
forward transconductance
15
S
Qg(tot)
total gate charge
64.5
120
nC
Qgs
gate-source charge
7.6
nC
Qgd
gate-drain (Miller) charge
11.5
nC
td(on)
turn-on delay time
VDD =15V; RD =15 ; VGS =10V; RG =6
12
30
ns
tr
turn-on rise time
15
60
ns
td(off)
turn-off delay time
60
150
ns
tf
turn-off fall time
50
140
ns
Source-drain (reverse) diode
VSD
0.7
1.1
V
trr
reverse recovery time
IS = 2.3 A; dIS/dt = 100 A/s
60
ns
Tj =25 °C and 150 °C; VDS > ID xRDSon
Fig 5.
Output characteristic; drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristic: drain current as
function of gate-source voltage; typical values
03ae56
0
10
20
30
40
50
0
0.5
1
1.5
2
VDS (V)
ID
(A)
VGS = 3 V
4 V
10 V
03ae58
0
10
20
30
40
50
01
23
4
VGS (V)
ID
(A)
VDS > ID x RDSon
25 C
150 C
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