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參數(shù)資料
| 型號： | 934056381118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 244K |
| 代理商： | 934056381118 |
Philips Semiconductors
Si4420DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 28 May 2001
6 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
ID = 250 A; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ae57
0
0.01
0.02
0
1020
3040
50
ID (A)
RDSon
(
)
Tj = 25 C
4 V
VGS =10 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
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