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Philips Semiconductors
Si9936DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 July 2001
6 of 13
9397 750 08413
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af69
0
10
20
30
40
0
0.5
1
1.5
2
2.5
3
VDS (V)
ID
(A)
3.5 V
5 V
4.5 V
4 V
10 V
3 V
VGS = 2 V
2.5 V
6 V
Tj = 25 C
03af71
0
10
20
30
40
01234567
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 150 C
25 C
03af70
0
0.02
0.04
0.06
0.08
0
10203040
ID (A)
RDSon
(
)
Tj = 25 C
VGS = 4.5 V 5 V
6 V
10 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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