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參數(shù)資料
| 型號(hào)： | 934056385118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 250K |
| 代理商： | 934056385118 |
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Philips Semiconductors
Si9936DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 July 2001
5 of 13
9397 750 08413
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
ID = 250 A; VDS =VGS
1
V
IDSS
drain-source leakage current
VDS =24V; VGS =0V
Tj =25 °C
2
A
Tj =55 °C
20
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
RDSon
drain-source on-state resistance
35
50
m
44
80
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =5A
11
S
Qg(tot)
total gate charge
18.5
35
nC
Qgs
gate-source charge
1.9
nC
Qgd
gate-drain (Miller) charge
3
nC
td(on)
turn-on delay time
VDD =15V; RD =15 ; VGS =10V; RG =6
11
30
ns
tr
turn-on rise time
925
ns
td(off)
turn-off delay time
25
50
ns
tf
turn-off fall time
10
50
ns
Source-drain (reverse) diode
VSD
0.72
1.2
V
trr
reverse recovery time
IS = 5 A; dIS/dt = 100 A/s; VGS =0V
60
160
ns
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